ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
نویسندگان
چکیده
An effective passivation technique for AlGaN/GaN HEMTs is presented. This technique features ultrathin AlN film grown by atomic layer deposition (ALD). With in-situ remote plasma pretreatment prior to the AlN deposition, atomic sharp interface between ALD-AlN and III-nitride can be obtained. Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD-AlN passivated AlGaN/GaN HEMTs under high drain bias switching conditions.
منابع مشابه
AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is pr...
متن کاملInvestigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
AlN passivation layers grown by atomic layer epitaxy have been implemented to passivate the surface of AlGaN/GaN high electron mobility transistors (HEMTs). These layers suppress surface charge trapping effects, such as current collapse, reduction of maximum drain current, and increase of dynamic on resistance. Each passivation scheme is characterized using pulsed I-V measurements, a novel on-w...
متن کاملAnalysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt sh...
متن کاملImpacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.
Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely e...
متن کاملHigh Breakdown ( > 1500 V ) AlGaN / GaN HEMTs by Substrate - Transfer Technology
In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electronmobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standar...
متن کامل